Vidwan-ID : 121399



  • Dr Balamurugan N B

  • Associate Professor
  • Thiagarajar College of Engineering
Publications 1997 - 2022

Publications

  • 97
    Journal Articles
  • 24
    Conference
    Proceedings
  • 1
    Book
  • 1
    Incollection
  • 1
    Misc
  • 3
    Projects
  • 1
  • 1
  • 2
  • 25

Citations / H-Index

733 Citations
16 h-index
342 Citations

Altmetrics

3
2
6
429
1

Google Scholar

Co-author Network


Expertise

Electrical and Electronic Engineering

Vlsi and Semiconductor Device Modeling

Personal Information

Dr Balamurugan N B

Male
Department of ECE Thiagarajar College of Engineering, V3JJ+VJ3, Thiruparankundram
Madurai, Tamil Nadu, India - 625015


Experience

  • Associate Professor

    Electronics and Communication Engineering

    Thiagarajar College of Engineering

  • Assistant Professor

    Electronics and Communication Engineering

    Thiagarajar College of Engineering

  • Lecturer

    Electronics and Communication Engineering

    Thiagarajar College of Engineering

  • Lecturer

    Electronics and Communication Engineering

    R.V.S. Engineering College


Qualification

  • PhD

    Anna University, Chennai

  • M.E

    Thiagarajar College of Engineering

  • B.E

    Thiagarajar College of Engineering


Doctoral Theses Guided

2019

MODELING, SIMULATION AND ANALYSIS OF DOUBLE GATE MOSFET STRUCTURES FOR BIOSENSING APPLICATIONS

S.Buvaneeswari, Anna University, Chennai

2019

ANALYTICAL MODELING AND SIMULATION OF AlInSb/InSb/AlInSb BASED SYMMETRIC AND ASYMMETRIC DOUBLE GATE HIGH ELECTRON MOBILITY TRANSISTORS

T.Venish Kumar, Anna University, Chennai

2019

MODELING, SIMULATION AND CHARACTERIZATION OF DUAL MATERIAL GATE GaN BASED HIGH ELECTRON MOBILITY TRANSISTORS FOR HIGH FREQUENCY APPLICATIONS

K.Sowmya, Anna University, Chennai

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2019

MODELING, SIMULATION AND ANALYSIS OF DOUBLE GATE MOSFET STRUCTURES FOR BIOSENSING APPLICATIONS

S.Buvaneeswari, Anna University, Chennai

2019

ANALYTICAL MODELING AND SIMULATION OF AlInSb/InSb/AlInSb BASED SYMMETRIC AND ASYMMETRIC DOUBLE GATE HIGH ELECTRON MOBILITY TRANSISTORS

T.Venish Kumar, Anna University, Chennai

2019

MODELING, SIMULATION AND CHARACTERIZATION OF DUAL MATERIAL GATE GaN BASED HIGH ELECTRON MOBILITY TRANSISTORS FOR HIGH FREQUENCY APPLICATIONS

K.Sowmya, Anna University, Chennai

2019

MODELING, SIMULATION AND ANALYSIS OF SUBTHRESHOLD CHARACTERISTICS IN DUAL METAL DIELECTRIC ENGINEERED JUNCTIONLESS TUNNEL FET

G.Lakshmi Priya, Anna University, Chennai

2018

CERTAIN INVESTIGATIONS ON DIABETIC NEUROPATHY USING SOFTCOMPUTING TECHNIQUES AND ITS FPGA IMPLEMENTATION

M.Jothi, Anna University, Chennai

2017

ANALYTICAL MODELING AND SIMULATION OF ADVANCED TUNNEL FETS FOR REDUCED SHORT CHANNEL EFFECTS

P.Vanitha, Anna University, Chennai

2016

MODELING, SIMULATION AND ANALYSIS OF CERTAIN SCATTERING EFFECTS IN SILICON NANOWIRE TRANSISTORS

I. Sheik Arafat, Anna University, Chennai

2015

ANALYTICAL MODELING AND SIMULATION OF ADVANCED SURROUNDING GATE SILICON NANOWIRE TRANSISTORS

M.Karthigai Pandian, Anna University, Chennai

2015

ANALYSIS AND SIMULATION OF SINGLE ELECTRON TRANSISTORS

L.Sheela, Anna University, Chennai

2015

ANALYTICAL MODELING AND SIMULATION OF HIGH ELECTRON MOBILITY TRANSISTORS

S.Theodore Chandra, Anna University, Chennai

2015

ANALYTICAL MODELING AND SIMULATION OF TRI MATERIAL GATE ALL AROUND SILICON NANOWIRE TUNNEL FETS

D.Saraswathi, Anna University, Chennai

2014

MODELING, SIMULATION AND ANALYSIS OF CERTAIN ADVANCED TUNNEL FET STRUCTURES

T.S.Arun Samuel, Anna University, Chennai

2014

ANALYTICAL MODELING AND SIMULATION OF QUANTUM EFFECTS IN MULTIGATE MOSFETS

P.Vimala, Anna University, Chennai

2014

ANALYTICAL MODELING AND SIMULATION OF FULLY DEPLETED TRIPLE MATERIAL SURROUNDING GATE MOSFETS CONSIDERING SHORT CHANNEL EFFECTS

P.Suveetha Dhanaselvam, Anna University, Chennai

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Membership In Professional Bodies

2010

IEEE

Senior Member

2001

ISTE

Life Member

2010

IEEE

Senior Member

2001

ISTE

Life Member

Read Less

Research Projects

Modeling and Simulation of High Electron Mobility Transistors(HEMTs) for High Frequency CMOS Applications

Funding Agency : AICTE-RPS

Modeling and Simulation of Multi-gate Nanowire Transistors for Low power CMOS Application

Funding Agency : AICTE-RPS

Analytical Modeling and Simulation of Quantum Mechanical effects in Multigate MOSFETs

Funding Agency : DST-WoS 'A'

Modeling and Simulation of High Electron Mobility Transistors(HEMTs) for High Frequency CMOS Applications

Funding Agency : AICTE-RPS

Modeling and Simulation of Multi-gate Nanowire Transistors for Low power CMOS Application

Funding Agency : AICTE-RPS

Analytical Modeling and Simulation of Quantum Mechanical effects in Multigate MOSFETs

Funding Agency : DST-WoS 'A'

Read Less